New materials drive semiconductor conversion technology further
Abstract Nanodevices prepared by a research team at the University of Nebraska-Lincoln, USA; a layer of atomic-thick molybdenum disulfide complex is placed on top of a layer of polymer (translucent blue material in the figure); It has the important characteristics of modern electronics. University of Nebraska, USA...
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Nanodevices prepared by a research team at the University of Nebraska-Lincoln; a layer of atomic-dense molybdenum disulfide complex is placed on top of a layer of polymer (translucent blue material in the figure); An important feature of modern electronics.
A research team at the University of Nebraska-Lincoln used a reversible method to modify the current properties of nanomaterials. In the future, the characteristics of multiple electronic technologies could be integrated into a single electronic device. The technology will enable the development of 2D materials from digital processing to data storage and ultimately to photo-touch devices; the versatility of the material allows multiple electronic devices to be scaled down and integrated into one device.
Xia Hong and colleagues used an atomic-thickness molybdenum disulfide (MoS2) sheet as a compound whose electrical conductivity is similar to that of silicon. The researchers first covered a layer of ferroelectric polymer on MoS2; it reversed the arrangement or polarization of positive and negative charges by applying an electric field to the polymer.
The staff found that by selectively applying a voltage to the polymer surface, the polarization of the polymer can be controlled to reconfigure the electronic properties of the MoS2.
When the positive and negative charges of the polymer are aligned against the MoS2 layer or away from the MoS2 layer, the current of the MoS2 sheet is free to flow in both directions and is equal to the applied voltage. In this state, MoS2 has the function of a transistor, which is a digitally processed signal component represented by the binary language 1s and 0s forms for releasing or suppressing current.
When the researchers polarized the polymer in different ways - creating two perpendicular but relatively aligned polarization domains, the performance of the MoS2 layer changed; when applying equal voltages and different polarities, The MoS2 layer becomes a diode that only allows current to flow in one direction and not in the other.
Hong introduced that the MoS2 maintains its transistor and diode performance even when the voltage is removed. Hong calls this technical quality of low voltage requirements "very promising low-voltage technology equipment." The mechanical properties of such atomic thickness semiconductors and ferroelectric polymers are well suited for flexible wearable electronic products.
The reversibility of this technology helps to improve the traditional old method of semiconductor processing, namely doping; doping is a chemical process that imparts semiconductor design functions.
“The technology doesn't require any chemical changes, just electrical reprogramming of the material's function,†says Hong.
The study was published in the journal Physical Review. ( Compile: China Superhard Materials Network )
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